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Band Gap Engineering of Silicene Zigzag Nanoribbons with Perpendicular Electric Fields: A Theoretical Study
슈퍼관리자 2021-05-21

Band Gap Engineering of Silicene Zigzag Nanoribbons with Perpendicular Electric Fields: A Theoretical Study

  • Authors :

    Y. Liang, V. Wang, H. Mizuseki, and Y. Kawazoe

  • Journal :

    J. Phys.: Condens. Matter

  • Vol :

    24

  • Page :

    455302

  • Year :

    2012

Abstract

The electronic properties of silicene zigzag nanoribbons with the presence of perpendicular fields are studied by using first-principles calculations and the generalized nearest neighboring approximation method. In contrast to the planar graphene, in silicene the Si atoms are not coplanar. As a result, by applying perpendicular fields to the two-dimensional silicene sheet, the on-site energy can be modulated and the band gap at the Dirac point is open. The buckled structure also creates a height difference between the two edges of the silicene zigzag nanoribbons. We find that the external fields can modulate the energies of spin-polarized edge states and their corresponding band gaps. Due to the polarization in the plane, the modulation effect is width dependent and becomes much more significant for narrow ribbons.
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