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The effect of the stacking fault on the diffusion of chemisorbed hydrogen atoms inside few-layered graphene
슈퍼관리자 2021-05-21

The effect of the stacking fault on the diffusion of chemisorbed hydrogen atoms inside few-layered graphene

  • Authors :

    D. H. Chung, H. Guk, D. Kim, S. S. Han, N. Park, K. Choi, and S.-H. Choi

  • Journal :

    RSC Advances

  • Vol :

    4

  • Page :

    9223-9228

  • Year :

    2014

Abstract

We examined the diffusion of hydrogen atoms in mono-, bi- and tetralayer graphene with AB stacking and two bilayer graphene with stacking faults using density functional theory. The bi- and tetralayer graphene provide diffusion pathways with lower energy barriers inside the interlayer space. Inside the bi- and tetralayer graphene with AB stacking, the in-plane diffusion is more favorable than the inter-plane jumping. However, the stacking faults made by sliding layer planes lowers the energy barrier of the inter-plane jumping and the effective frequency of the inter-plane jump is larger than that of the in-plane diffusion inside the graphene layers with the stacking faults. This suggests that hydrogen atoms can diffuse over a long distance inside few-layered graphene with stacking faults jumping consecutively between adjacent layers.
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